| PART |
Description |
Maker |
| DCJ010 1185 |
Silicon Epitaxial Planar Type Diode High-Speed Switching Diode
From old datasheet system
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| MA3S795E |
Silicon epitaxial planar type 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| MA4X746 |
Silicon epitaxial planar type 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S377 |
Silicon epitaxial planar type UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2Z784 |
Silicon epitaxial planar type 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| MA2C719 |
Silicon epitaxial planar type 0.5 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MA2C188 MA188 |
Silicon epitaxial planar type 0.2 A, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| KDS120 KDS12008 |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
| KTX301U |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管（通用，超高速开关）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1SV172 |
Diode Silicon Epitaxial Pin Type
|
TOSHIBA
|
